basic_info |
|
| Product_Name： | GERMANE |
| CAS： | 7782-65-2 |
| EnglishSynonyms： | GERMANE |
| pro_mdlNumber： | MFCD00011028 |
| pro_acceptors： | 0 |
| pro_donors： | 0 |
| pro_smile： | [GeH4] |
| InChi： | InChI=1S/GeH4/h1H4 |
| InChiKey： | InChIKey=QUZPNFFHZPRKJD-UHFFFAOYSA-N |
property |
|
| MeltingPoint： | -165 DEG C(LIT) |
| Boiling_Point： | DENSITY: 1.53 |
| Density： | vapor1.53(？142°C,vsair) |
| PhysicalProperty： | TRANSITION TEMPERATURE: CRITICAL TEMPERATURE 35 DEG C VAPOR DENSITY: 1.53 (-142 DEG C, VS AIR) |
| Comments： | FEATURES AND BENEFITS: GERMANE GAS IS USED IN THE DEPOSITION OF EPITAXIAL AND AMORPHOUS SIGE ALLOY LAYERS USED IN THE PRODUCTION OF HIGH PERFORMANCE DEVICES INCLUDING PHOTOVOLTAIC CELLS AND INTEGRATED CIRCUITS (IC). PRECURSOR TO GERMANIUM-CONTAINING THIN FILMS BY CHEMICAL VAPOR DEPOSITION (CVD) AND MOLECULAR BEAM EPITAXY (MBE). A CVD PRECURSOR FOR GERMANIUM CARBIDE SEMICONDUCTING FILMS FORM: GAS IMPURITIES: <0.5 PPM OXYGEN (O2) IMPURITIES: <1 PPM CARBON MONOXIDE AND TRIGERMANE (CO AND GE3H8) IMPURITIES: <1 PPM THC IMPURITIES: <1 PPM WATER (H2O) IMPURITIES: <2 PPM CARBON DIOXIDE (CO2) IMPURITIES: <2 PPM NITROGEN (N2) IMPURITIES: <20 PPM DIGERMANE (GE2H6) IMPURITIES: <5 PPM CHLOROGERMANES IMPURITIES: <5 PPM GERMOXANES IMPURITIES: <50 PPM HYDROGEN (H2) RECOMMENDED PRODUCTS: STAINLESS STEEL REGULATORS Z527416 OR Z527424 ARE RECOMMENDED RIDADR: UN 2192 2.3 RTECS: LY4900000 UNSPSC: 12142100 WGK: 3 |
| Specification： | ELECTRONIC GRADE |
secure_info |
|
| secure_symbol： |
GHS02
GHS06
|
| secure_signal_word： | Danger |
| secure_risk_stmt： | H220-H280-H302-H330 |
| secure_cautionary_stmt： | P210-P260-P284-P310-P410 + P403 |
| secure_damage_code： | F+,T+ |
| secure_risk_disclosure_stmt： | R:12-17-22-26 |
| secure_security_stmt： | S:16-24-26-36/37/39-45 |
| secure_wgk_germany： | 3 |
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