Basic Information |
|
Product Name: | INDIUM ANTIMONIDE |
CAS: | 1312-41-0 |
English Synonyms: | INDIUM ANTIMONIDE |
MDL Number.: | MFCD00016146 |
H bond acceptor: | 0 |
H bond donor: | 0 |
Smile: | [In]#[Sb] |
InChi: | InChI=1S/In.Sb |
InChiKey: | InChIKey=WPYVAWXEWQSOGY-UHFFFAOYSA-N |
Property |
|
Boiling Point: | DENSITY: 5.76 |
Comments: | APPLICATION: CRYSTAL STRUCTURE: ZINC BLENDE STRUCTURE, CUBIC ASSAY METHOD: TRACE METALS BASIS FORM: CRYSTALS GENERAL DESCRIPTION: INSB IS A III-V SEMICONDUCTOR AND HAS A VERY NARROW BAND GAP (170 MEV) AND HIGH ELECTRON MOBILITIY, MAKING IT A MATERIAL OF INTEREST FOR HIGH-SPEED ELECTRONICS, PHOTOVOLTAIC APPLICATIONS, IR DETECTING DEVICES, THERMOELECTRICS, AND MAGNETORESISTIVE SENSORS WGK: 2 |
Safety information |
|
Symbol: | GHS07 GHS09 |
Signal word: | Warning |
Hazard statements: | H302-H332-H411 |
Precautionary statements: | P273 |
hazard symbol: | Xn,N |
Risk Code: | R:20/22-51/53 |
Safe Code: | S:61 |
WGK Germany: | 2 |
* If the product has intellectual property rights, a license granted is must or contact us.
2010-2021 © Chemical Cloud Database. ALL Rights Reserved.浙ICP备11020424号-1 浙公网安备 33010802004002号