HAFNIUM TERT-BUTOXIDE ,2172-02-3 _Chemical Cloud Database

HAFNIUM TERT-BUTOXIDE

Basic Information
Product Name：	HAFNIUM TERT-BUTOXIDE
CAS：	2172-02-3
English Synonyms：	HAFNIUM TETRA-T-BUTOXIDE ; HAFNIUM (IV) T-BUTOXIDE (99.9%-HF) ; HAFNIUM(IV) TERT-BUTOXIDE ; HAFNIUM (IV) T-BUTOXIDE (99.9%-HF) ; HAFNIUM T-BUTOXIDE ; HAFNIUM TERT-BUTOXIDE ; HAFNIUM (IV) T-BUTOXIDE
MDL Number.：	MFCD00070458
H bond acceptor：	4
H bond donor：	0
Smile：	CC(C)(C)O[Hf](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C
InChi：	InChI=1S/4C4H9O.Hf/c41-4(2,3)5;/h41-3H3;/q4*-1;+4
InChiKey：	InChIKey=WZVIPWQGBBCHJP-UHFFFAOYSA-N
Property
Boiling Point：	90 DEG C/5 MMHG(LIT)
Density：	DENSITY: 1.166 G/ML AT 25 DEG C(LIT)
Physical Property：	FLASHPOINT: 28 DEG C FLASHPOINT: 82.4 DEG F REFRACTIVE INDEX: N20/D 1.424(LIT)
Comments：	APPLICATION: AND HIGHLY PROMISING PRECURSOR FOR THE DEPOSITION OF HFO2 AND OTHER HAFNIUM DOPED THIN FILMS BY VAPOR DEPOSITION TECHNIQUES. THE DEPOSITED FILMS SHOW HIGH DIELECTRIC CONSTANT SUITABLE FOR SEMICONDUCTOR DEVICES APPLICATION: HAFNIUM TERT-BUTOXIDE [HF(OTBU)4] IS A MONONUCLEAR APPLICATION: VOLATILE FORM: LIQUID WGK: 3
Safety information

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