HAFNIUM TERT-BUTOXIDE ,2172-02-3 _ChemCD

HAFNIUM TERT-BUTOXIDE

basic_info
Product_Name：	HAFNIUM TERT-BUTOXIDE
CAS：	2172-02-3
EnglishSynonyms：	HAFNIUM (IV) T-BUTOXIDE (99.9%-HF) ; HAFNIUM(IV) TERT-BUTOXIDE ; HAFNIUM (IV) T-BUTOXIDE (99.9%-HF) ; HAFNIUM TERT-BUTOXIDE ; HAFNIUM (IV) T-BUTOXIDE ; HAFNIUM TETRA-T-BUTOXIDE ; HAFNIUM T-BUTOXIDE
pro_mdlNumber：	MFCD00070458
pro_acceptors：	4
pro_donors：	0
pro_smile：	CC(C)(C)O[Hf](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C
InChi：	InChI=1S/4C4H9O.Hf/c41-4(2,3)5;/h41-3H3;/q4*-1;+4
InChiKey：	InChIKey=WZVIPWQGBBCHJP-UHFFFAOYSA-N
property
Boiling_Point：	90 DEG C/5 MMHG(LIT)
Density：	DENSITY: 1.166 G/ML AT 25 DEG C(LIT)
PhysicalProperty：	FLASHPOINT: 28 DEG C FLASHPOINT: 82.4 DEG F REFRACTIVE INDEX: N20/D 1.424(LIT)
Comments：	APPLICATION: AND HIGHLY PROMISING PRECURSOR FOR THE DEPOSITION OF HFO2 AND OTHER HAFNIUM DOPED THIN FILMS BY VAPOR DEPOSITION TECHNIQUES. THE DEPOSITED FILMS SHOW HIGH DIELECTRIC CONSTANT SUITABLE FOR SEMICONDUCTOR DEVICES APPLICATION: HAFNIUM TERT-BUTOXIDE [HF(OTBU)4] IS A MONONUCLEAR APPLICATION: VOLATILE FORM: LIQUID WGK: 3
secure_info

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