HAFNIUM TERT-BUTOXIDE

pro_cas
2172-02-3
pro_cdbregno
CCD00046415
pro_formula
C16 H36 Hf O4
pro_molWeight
470.946

basic_info

Product_Name: HAFNIUM TERT-BUTOXIDE
CAS: 2172-02-3
EnglishSynonyms: HAFNIUM (IV) T-BUTOXIDE (99.9%-HF) ; HAFNIUM(IV) TERT-BUTOXIDE ; HAFNIUM (IV) T-BUTOXIDE (99.9%-HF) ; HAFNIUM TERT-BUTOXIDE ; HAFNIUM (IV) T-BUTOXIDE ; HAFNIUM TETRA-T-BUTOXIDE ; HAFNIUM T-BUTOXIDE
pro_mdlNumber: MFCD00070458
pro_acceptors: 4
pro_donors: 0
pro_smile: CC(C)(C)O[Hf](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C
InChi: InChI=1S/4C4H9O.Hf/c4*1-4(2,3)5;/h4*1-3H3;/q4*-1;+4
InChiKey: InChIKey=WZVIPWQGBBCHJP-UHFFFAOYSA-N

property

Boiling_Point: 90 DEG C/5 MMHG(LIT)
Density: DENSITY: 1.166 G/ML AT 25 DEG C(LIT)
PhysicalProperty: FLASHPOINT: 28 DEG C
FLASHPOINT: 82.4 DEG F
REFRACTIVE INDEX: N20/D 1.424(LIT)
Comments: APPLICATION: AND HIGHLY PROMISING PRECURSOR FOR THE DEPOSITION OF HFO2 AND OTHER HAFNIUM DOPED THIN FILMS BY VAPOR DEPOSITION TECHNIQUES. THE DEPOSITED FILMS SHOW HIGH DIELECTRIC CONSTANT SUITABLE FOR SEMICONDUCTOR DEVICES
APPLICATION: HAFNIUM TERT-BUTOXIDE [HF(OTBU)4] IS A MONONUCLEAR
APPLICATION: VOLATILE
FORM: LIQUID
WGK: 3

secure_info

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