basic_info |
|
Product_Name: | HAFNIUM TERT-BUTOXIDE |
CAS: | 2172-02-3 |
EnglishSynonyms: | HAFNIUM (IV) T-BUTOXIDE (99.9%-HF) ; HAFNIUM(IV) TERT-BUTOXIDE ; HAFNIUM (IV) T-BUTOXIDE (99.9%-HF) ; HAFNIUM TERT-BUTOXIDE ; HAFNIUM (IV) T-BUTOXIDE ; HAFNIUM TETRA-T-BUTOXIDE ; HAFNIUM T-BUTOXIDE |
pro_mdlNumber: | MFCD00070458 |
pro_acceptors: | 4 |
pro_donors: | 0 |
pro_smile: | CC(C)(C)O[Hf](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C |
InChi: | InChI=1S/4C4H9O.Hf/c4*1-4(2,3)5;/h4*1-3H3;/q4*-1;+4 |
InChiKey: | InChIKey=WZVIPWQGBBCHJP-UHFFFAOYSA-N |
property |
|
Boiling_Point: | 90 DEG C/5 MMHG(LIT) |
Density: | DENSITY: 1.166 G/ML AT 25 DEG C(LIT) |
PhysicalProperty: | FLASHPOINT: 28 DEG C FLASHPOINT: 82.4 DEG F REFRACTIVE INDEX: N20/D 1.424(LIT) |
Comments: | APPLICATION: AND HIGHLY PROMISING PRECURSOR FOR THE DEPOSITION OF HFO2 AND OTHER HAFNIUM DOPED THIN FILMS BY VAPOR DEPOSITION TECHNIQUES. THE DEPOSITED FILMS SHOW HIGH DIELECTRIC CONSTANT SUITABLE FOR SEMICONDUCTOR DEVICES APPLICATION: HAFNIUM TERT-BUTOXIDE [HF(OTBU)4] IS A MONONUCLEAR APPLICATION: VOLATILE FORM: LIQUID WGK: 3 |
secure_info |
* If the product has intellectual property rights, a license granted is must or contact us.
2010-2025 © Chemical Cloud Database. ALL Rights Reserved.浙ICP备11020424号-1
浙公网安备 33010802004002号