Basic Information |
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Product Name: | ZIRCONIUM(IV) TERT-BUTOXIDE |
CAS: | 2081-12-1 |
English Synonyms: | ZTB ; ZIRCONIUM(IV) TERT-BUTOXIDE ; ZIRCONIUM T-BUTOXIDE ; TETRA-TERT-BUTYL ZIRCONATE ; ZIRCONIUM(IV) T-BUTOXIDE ; ZIRCONIUM TERT-BUTOXIDE ; ZIRCONIUM TERT-BUTANOLATE ; TETRA-TERT-BUTOXYZIRCONIUM ; ZIRCONIUM TETRA-T-BUTOXIDE |
MDL Number.: | MFCD00075085 |
H bond acceptor: | 4 |
H bond donor: | 0 |
Smile: | CC(C)(C)O[Zr](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C |
InChi: | InChI=1S/4C4H9O.Zr/c4*1-4(2,3)5;/h4*1-3H3;/q4*-1;+4 |
InChiKey: | InChIKey=BGGIUGXMWNKMCP-UHFFFAOYSA-N |
Property |
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Boiling Point: | MP: >250 DEG C |
Density: | 0.985g/mLat25°C(lit.) |
Physical Property: | FLASHPOINT: 183.2 DEG F FLASHPOINT: 84 DEG C REFRACTIVE INDEX: N20/D 1.424(LIT) |
Comments: | APPLICATION: ZIRCONIUM TERT-BUTOXIDE (ZTB) PRECURSOR IS USED TO DEPOSIT THIN FILMS OF ZIRCONIA AND OTHER ZIRCONIUM CONTAINING FILMS BY ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION METHODS. ZIRCONIUM OXIDE THIN FILMS CAN ALSO BE GROWN AT LOW TEMPERATURES, RANGING FROM 150 DEG C TO 300 DEG C, BY THE PRESENCE OF MOISTURE ALONG WITH ZTB OR BY UV-ENHANCED ATOMIC LAYER DEPOSITION (UV-ALD) PROCESS FORM: LIQUID FREQUENTLY ASKED QUESTIONS: LIVE CHAT AND FREQUENTLY ASKED QUESTIONS ARE AVAILABLE FOR THIS PRODUCT WGK: 3 |
Safety information |
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Symbol: |
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Signal word: | Warning |
Hazard statements: | H315-H319-H335 |
Precautionary statements: | P261-P305 + P351 + P338 |
hazard symbol: | Xi |
Risk Code: | R:36/37/38 |
Safe Code: | S:26-36 |
WGK Germany: | 3 |
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