ZIRCONIUM(IV) TERT-BUTOXIDE

CAS No.
2081-12-1
CCD No.
CCD00047544
Formula
C16 H36 O4 Zr
MolWeight
383.68

Basic Information

Product Name: ZIRCONIUM(IV) TERT-BUTOXIDE
CAS: 2081-12-1
English Synonyms: ZTB ; ZIRCONIUM(IV) TERT-BUTOXIDE ; ZIRCONIUM T-BUTOXIDE ; TETRA-TERT-BUTYL ZIRCONATE ; ZIRCONIUM(IV) T-BUTOXIDE ; ZIRCONIUM TERT-BUTOXIDE ; ZIRCONIUM TERT-BUTANOLATE ; TETRA-TERT-BUTOXYZIRCONIUM ; ZIRCONIUM TETRA-T-BUTOXIDE
MDL Number.: MFCD00075085
H bond acceptor: 4
H bond donor: 0
Smile: CC(C)(C)O[Zr](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C
InChi: InChI=1S/4C4H9O.Zr/c4*1-4(2,3)5;/h4*1-3H3;/q4*-1;+4
InChiKey: InChIKey=BGGIUGXMWNKMCP-UHFFFAOYSA-N

Property

Boiling Point: MP: >250 DEG C
Density: 0.985g/mLat25°C(lit.)
Physical Property: FLASHPOINT: 183.2 DEG F
FLASHPOINT: 84 DEG C
REFRACTIVE INDEX: N20/D 1.424(LIT)
Comments: APPLICATION: ZIRCONIUM TERT-BUTOXIDE (ZTB) PRECURSOR IS USED TO DEPOSIT THIN FILMS OF ZIRCONIA AND OTHER ZIRCONIUM CONTAINING FILMS BY ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION METHODS. ZIRCONIUM OXIDE THIN FILMS CAN ALSO BE GROWN AT LOW TEMPERATURES, RANGING FROM 150 DEG C TO 300 DEG C, BY THE PRESENCE OF MOISTURE ALONG WITH ZTB OR BY UV-ENHANCED ATOMIC LAYER DEPOSITION (UV-ALD) PROCESS
FORM: LIQUID
FREQUENTLY ASKED QUESTIONS: LIVE CHAT AND FREQUENTLY ASKED QUESTIONS ARE AVAILABLE FOR THIS PRODUCT
WGK: 3

Safety information

Symbol: GHS07 GHS07
Signal word: Warning
Hazard statements: H315-H319-H335
Precautionary statements: P261-P305 + P351 + P338
hazard symbol: Xi
Risk Code: R:36/37/38
Safe Code: S:26-36
WGK Germany: 3

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