TETRAKIS(2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATO)ZIRCONIUM(IV) ,18865-74-2

TETRAKIS(2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATO)ZIRCONIUM(IV)

Basic Information
Product Name：	TETRAKIS(2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATO)ZIRCONIUM(IV)
CAS：	18865-74-2
English Synonyms：	TETRAKIS(2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATO)ZIRCONIUM ; TETRAKIS(2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATO)ZIRCONIUM(IV) ; ZIRCONIUM TETRAKIS(2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATE) ; ZIRCONIUM (IV) 2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATE ; ZR(TMHD)4 ; ZIRCONIUM 2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATE ; ZIRCONIUM TETRAKIS(DIPIVALOYLMETHANATE)
MDL Number.：	MFCD00145380
H bond acceptor：	8
H bond donor：	0
Smile：	CC(C)(C)/C(=C/C(=O)C(C)(C)C)/O[Zr](O/C(=C\C(=O)C(C)(C)C)/C(C)(C)C)(O/C(=C\C(=O)C(C)(C)C)/C(C)(C)C)O/C(=C\C(=O)C(C)(C)C)/C(C)(C)C
InChi：	InChI=1S/4C11H20O2.Zr/c41-10(2,3)8(12)7-9(13)11(4,5)6;/h47,12H,1-6H3;/q;;;;+4/p-4/b4*8-7-;
InChiKey：	InChIKey=MLSNEJQSDZMDFZ-DNSQIVDOSA-J
Property
Melting Point：	332-339 DEG C(LIT)
Boiling Point：	SUBL 180 DEG C/0.1 MM
Comments：	APPLICATION: ZIRCONIUM SOURCE PRECURSOR FOR GOOD QUALITY MOCVD OF PNZT FEATURES AND BENEFITS: PRECURSOR FOR ZIRCONIA THIN FILMS, WITH DEPOSITION AT LOWER TEMPERATURES PROMOTED BY PD(HFAC)2, OR YTTRIA-STABILIZED ZIRCONIA FILMS ON SILICON AND ON STAINLESS STEEL SUBSTRATES. ZIRCONIUM SOURCE PRECURSOR FOR GOOD QUALITY MOCVD OF PNZT FORM: SOLID GENERAL DESCRIPTION: ATOMIC NUMBER OF BASE MATERIAL: 40 ZIRCONIUM UNSPSC: 12352300 WGK: 3
Safety information

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