TETRAKIS(DIMETHYLAMINO)HAFNIUM ,19962-11-9

TETRAKIS(DIMETHYLAMINO)HAFNIUM

Basic Information
Product Name：	TETRAKIS(DIMETHYLAMINO)HAFNIUM
CAS：	19962-11-9 ;19782-68-4
English Synonyms：	ETRAKIS(DIMETHYLAMIDO)HAFNIUM(IV) ; TETRAKIS(DIMETHYLAMINO)HAFNIUM ; TETRAKIS(DIMETHYLAMIDO)HAFNIUM(IV) ; HAFNIUM DIMETHYLAMIDE ; TDMAH ; TETRAKIS(DIMETHYLAMINO)HAFNIUM(IV) ; TETRAKIS(DIMETHYLAMIDO)HAFNIUM
MDL Number.：	MFCD01862473
H bond acceptor：	4
H bond donor：	0
Smile：	CN(C)[Hf](N(C)C)(N(C)C)N(C)C
InChi：	InChI=1S/4C2H6N.Hf/c41-3-2;/h41-2H3;/q4*-1;+4
InChiKey：	InChIKey=ZYLGGWPMIDHSEZ-UHFFFAOYSA-N
Property
Melting Point：	26-29 DEG C(LIT)
Boiling Point：	85 DEG C/0.1MM
Density：	DENSITY: 1.098 G/ML AT 25 DEG C
Physical Property：	FLASHPOINT: 109.4 DEG F FLASHPOINT: 43 DEG C
Comments：	APPLICATION: PRECURSOR TO HFO2 BY ATOMIC LAYER DEPOSITION WITH WATER FORM: LOW-MELTING SOLID FREQUENTLY ASKED QUESTIONS: LIVE CHAT AND FREQUENTLY ASKED QUESTIONS ARE AVAILABLE FOR THIS PRODUCT GENERAL DESCRIPTION: ATOMIC NUMBER OF BASE MATERIAL: 72 HAFNIUM PROTOCOLS AND APPLICATIONS: PRECURSORS PACKAGED FOR DEPOSITIONS SYSTEMS RIDADR: UN 3396 4.3/PG 2 UNSPSC: 12352103 WGK: 3
Safety information

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