Molecular Structure:
CCD No.:CCD03255727
BIS(METHYL-ETA5-CYCLOPENTADIENYL)METHOXYMETHYLZIRCONIUM
Formula:2 C6 H7 . C2 H6 O Zr
MolWeight:295.535
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| Product Name： | BIS(METHYL-ETA5-CYCLOPENTADIENYL)METHOXYMETHYLZIRCONIUM |
| English Synonyms： | ZRCMMM ; BIS(METHYL-ETA5-CYCLOPENTADIENYL)METHOXYMETHYLZIRCONIUM ; ZRD-CO4 |
| MDL Number.： | MFCD16875687 |
| H bond acceptor： | 1 |
| H bond donor： | 0 |
| Smile： | C[C]1[CH][CH][CH][CH]1.C[C]1[CH][CH][CH][CH]1.CO[Zr]C |
| InChi： | InChI=1S/2C6H7.CH3O.CH3.Zr/c2*1-6-4-2-3-5-6;1-2;;/h2*2-5H,1H3;1H3;1H3;/q;;-1;;+1 |
| InChiKey： | InChIKey=LFGIFPGCOXPKMG-UHFFFAOYSA-N |
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| Boiling Point： | 110 DEG C/0.5 MMHG(LIT) |
| Density： | DENSITY: 1.27 G/ML+/-0.01 G/ML AT 25 DEG C(LIT) |
| Physical Property： | FLASHPOINT: 108 DEG C FLASHPOINT: 226.4 DEG F |
| Comments： | APPLICATION: ADVANCED PRECURSOR FOR ATOMIC LAYER DEPOSITION OF ZRO2 THIN FILMS. HAFNIUM AND ZIRCONIUM OXIDES ARE LEADING CANDIDATES TO REPLACE SILICION DIOXIDE AS THE GATE OXIDE IN A VARIETY OF SEMICONDUCTOR AND ENERGY APPLICATIONS. EXCELLENT PROPERTIES OF HFO2 AND ZRO2 FILMS MAKE THEM ESPECIALLY ATTRACTIVE FOR GATE OXIDE REPLACEMENT AND AS POTENTIAL INSULATING DIELECTRICS FOR CAPACITIVE ELEMENTS IN MEMORY DEVICES SUCH AS DRAM COLOR: COLORLESS FEATURES AND BENEFITS: COMPATIBLE WITH A VARIETY OF OXIDANTS IN ALD GROWTH PROCESSES ACROSS A WIDE TEMPERATURE RANGE EXHIBITING SELF LIMITING GROWTH UP TO 400 DEG C. PRECURSOR VOLATILITY AND THERMAL STABILITY PROPERTIES ENABLE EASY MATERIALS TRANSPORT FROM BUBBLERS INTO CONVENTIONAL DEPOSITION TOOLS FORM: LIQUID FREQUENTLY ASKED QUESTIONS: LIVE CHAT AND FREQUENTLY ASKED QUESTIONS ARE AVAILABLE FOR THIS PRODUCT GENERAL DESCRIPTION: ATOMIC NUMBER OF BASE MATERIAL: 40 ZIRCONIUM PROTOCOLS AND APPLICATIONS: PRECURSORS PACKAGED FOR DEPOSITIONS SYSTEMS WGK: 3 |
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Basic Information
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